Altermatt P.P., Schenk A., Heiser G.,
Journal of Applied Physics, 100, 113714, 2006
An empirical model for the density-of-states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P
An empirical model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B, and usage in device simulation
Altermatt P.P., Schenk A., Schmithüsen B., Heiser G.,
Journal of Applied Physics, 100, 113715, 2006
Polymere in Solarkollektoren am Beispiel des Elastomer-Metall-Absorbers (EMA-Kollektor)
Bertram E., Eisenmann W.,
Tagungsbericht VDI-Kunststoff-Forum Münster, 3.5.2006, Arbeitskreis Kunststofftechnik im VDI Münsterländer Bezirksverein e.V., 117-121, Münster, Deutschland, Mai, 2006
Unglazed Elastomer-Metal-Absorbers (EMA) as Solar-Roof Collectors: Measurement of the First Pilot System in Nordstemmen
Bertram E., Eisenmann W.,
Tagungsbericht EuroSun 2006, 6th ISES-Europe Solar Congress, 27.-30.6.2006, The Solar Energy Society (UK), im Druck, Glasgow, Grossbritannien, Juni, 2006
Metalldach-Sonnenkollektoren nach dem EMA-Prinzip: Messergebnisse aus der Pilotanlage Freibad Nordstemmen
Bertram E., Eisenmann W., Hofmann F.,
Tagungsbericht 16. Symposium Thermische Solarenergie, Kloster Banz, Bad Staffelstein, 17.-19.5.2006, Ostbayerisches Technologie-Transfer-Institut (OTTI), ISBN 3-934681-45-x, 106-111, Regensburg, Deutschland, Mai, 2006
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
Bothe K., Schmidt J.,
Journal of Applied Physics, 99, 013701/1-11, 2006
Electroluminescence imaging as an in-line characterisation tool for solar cell production
Bothe K., Pohl P., Schmidt J., Weber T., Altermatt P.P., Fischer B., Brendel R.,
Proceedings 21st European Photovoltaic Solar Energy Conference, 597-600, Dresden, Deutschland, 2006
Degradation of Cz silicon solar cells by sub-bandgap illumination
Bothe K., Schmidt J.,
Proceedings 21st European Photovoltaic Solar Energy Conference, 675-678, Dresden, Deutschland, September, 2006
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
Bothe K., Schmidt J.,
Journal of Applied Physics, 99, 1-11, 2006
Interpretation of the commonly observed I-V characteristics of c-Si cells having ideality factor larger than two
Breitenstein O., Altermatt P.P., Ramspeck K., Green M.A., Zhao J., Schenk A.,
Proceedings 4th World Conference on Photovoltaic Energy Conversion (WCPEC), 879-884, Waikoloa, Hawaii, USA, Mai, 2006
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